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Equipment for mask pattern generation and inspection

Multichannel laser generators

Pattern generators

Automatic mask inspection

Photomask inspection

Laser-based mask defect repair systems

Photorepeaters

Equipment for wafer pattern generation and inspection

Steppers

Large-area steppers

Pattern generator for wafers

Mask Aligners

Inspection of wafers and substrates

Chip Preparation Equipment

Probers

Wafer Grinders

Dicing Saws

Die Control and Cassetting Systems

Assembly and Packaging Equipment, Laser Processing

Die Bonders

Wire Bonders

Wafer Bonders

IC Pretreatment Equipment

Laser Processing Equipment

Microscopy, Optical Components

Microscopes

Optical Components
Aspherical parts
Spherical parts
Prisms
Wedges
Parallel-sided parts
Microlens Raster Components
Vacuum chucks
Antireflection coatings
Mirrors
Beamsplitters
Photolithography method
Bend Reflaction

Medical Equipment

Cardiology

Reanimation and intensive care

Surgery and trauma

Physiotherapy, neurology

Molds, Linear Step Motors, Sensors

Molds

Linear Step Motors

Step Motors, Sensors

Broadband Multilayer Antireflection Coatings


Specifications:

Substrate Material

For BK 7 and fused silica

Cleaning

Non-abrasive method, acetone or isopropyl alcohol on lens tissue are recommended

Damage Threshold

100 W/cm2 CW, 1 J/cm2 with 10 nsec pulses at 32525 nm

100 W/cm2 CW, 2 J/cm2 with 10 nsec pulses at 532 nm

100 W/cm2 CW, 2 J/cm2 with 10 nsec pulses at 1064 nm

100 W/cm2 CW, 2 J/cm2 with 10 nsec pulses at 1064 nm

Wavelength Range (nm) Center Wavelength (nm) Reflectivity Incidence Angle of
245-440 320 Ravg<0.5%,Rmax<1.0% 0-15o
430-700 530 Ravg<0.5%,Rmax<1.5% 0-15o
650-1000 790 Ravg<0.5%,Rmax<1.5% 0-15o
1000-1150 1210 Ravg<0.5%,Rmax<1.5% 0-15o
Laser Line Antireflection V-Coatings

Specifications:

Substrate Material

For BK 7 and fused silica

Cleaning

Non-abrasive method, acetone or isopropyl alcohol on lens tissue are recommended

Damage Threshold

100 W/cm2 CW, 2 J/cm2 with 10 nsec pulses at 488/514.5 nm

100 W/cm2 CW, 2 J/cm2 with 10 nsec pulses at 532 nm

1000 W/cm2 CW

100 W/cm2 CW, 2 J/cm2 with 10 nsec pulses at 694 nm

100 W/cm2 CW, 2 J/cm2 with 10 nsec pulses at 1064 nm.

Center Wavelength (nm) Reflectivity Angle of Incidence
488-514.5 Rmax<0.25% 0-15
532 Rmax<0.25% 0-15
632.8 Rmax<0.25% 0-15
694 Rmax<0.25% 0-15
1064 Rmax<0.25% 0-15

Russian version
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