The EM-2115 Semiautomatic substrate’s separation

The EM-2115 Semiautomatic Substrate Separation System is intended for double-setting separation of semiconducting wafers and substrates on the frame type satellite with an outer diameter 294 mm and with thickness 1,6 mm.

Сutting of substrates and wafers is performed with microabrasive special tool. Processed material – silicon, gallium arsenide, piezoquartz, lithium niobate, lithium tantalite, langasite, langalat, solids.

The system’s feature is using two independently positioned high-precision electrospindles, what provides simultaneous substrate’s separation by two different and two identical instruments.

The Semiautomatic make diagnostics of Actuation Systems and issuance of operational information on the LCD monitor.

For better separation of super hard materials and to increase productivity the system provides for the possibility of multistage separation.

SPECIFICATIONS Diameter of the processed semiconducting wafers 76, 100, 150, 200 mm Quantity of the installed electrospindle 2 pieces Power of electrospindle 1.2 kW Spindle revolutions range from 14000 to 60000 rpm The maximum movement of electrospindle on Y axis 270 mm The maximum movement of subject table on Y axis 320 mm The maximum movement of electrospindle on Z axis 24 mm Range of control of subject table’s working feed on X axis from 0.1 to 200 mm/s with discrete 0,1 mm/s Range of control of electrospindle’s stepper motion on Y axis from 0.01 to 270 mm with discrete 0,001 mm Accumulated error of electrospindle’s stepper motion on Y axis over a length 210 mm 0.005 mm The reproducibility of electrospindle’s motion on Z axis over a length 8 mm 0.005 mm Volumetric flow rate of compressed air (at a pressure of 0,5 MPa) 25 m3/h Pressure of compressed air 0.5-0.6 MPa Vacuum from 0.04 to 0.03 MPa Overall dimensions 1200×1050×1700 mm