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The EM-2115 Semiautomatic substrate’s separation
The EM-2115 Semiautomatic Substrate Separation System is intended for double-setting separation of semiconducting wafers and substrates on the frame type satellite with an outer diameter 294 mm and with thickness 1,6 mm. Ñutting of substrates and wafers is performed with microabrasive special tool.
Processed material – silicon, gallium arsenide, piezoquartz, lithium niobate, lithium tantalite, langasite, langalat, solids.
The system’s feature is using two independently positioned high-precision electrospindles, what provides simultaneous substrate’s separation by two different and two identical instruments.
The Semiautomatic make diagnostics of Actuation Systems and issuance of operational information on the LCD monitor.
For better separation of super hard materials and to increase productivity the system provides for the possibility of multistage separation.
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| Diameter of the processed semiconducting wafers, mm |
76, 100, 150, 200 |
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| Quantity of the installed electrospindle, pieces |
2 |
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| Power of electrospindle, kW |
1.2 |
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| Spindle revolutions range, rpm |
from 14000 to 60000 |
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| The maximum movement of electrospindle on Y axis, mm |
270 |
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| The maximum movement of subject table on Y axis, mm |
320 |
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| The maximum movement of electrospindle on Z axis, mm |
24 |
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| Range of control of subject table’s working feed on X axis, mm /ñ |
from 0.1 to 200 with discrete 0,1 |
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| Range of control of electrospindle’s stepper motion on Y axis, mm |
from 0.01 to 270 with discrete 0,001 |
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| Accumulated error of electrospindle’s stepper motion on Y axis over a length 210 mm, mm |
0.005 |
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| The reproducibility of electrospindle’s motion on Z axis over a length 8 mm, mm |
0.005 |
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| Volumetric flow rate of compressed air (at a pressure of 0,5 MPa), m3/h |
25 |
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| Pressure of compressed air, MPa |
0.5-0.6 |
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| Vacuum |
from 0.04 to 0.03 MPa |
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| Overall dimensions (l×w×h), mm |
1200×1050×1700 |
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